Made by Toshiba Semiconductor
High insulation pressure resistance with 4-pin DIP photo coupler combining GaAs infrared LED and silicone photo transistor.
Recommended replacement for TLP521.
Number of Circuits: 1 circuit
Insulation pressure resistance: ~5,000 V
Input Method: One-way
Output method: Photo transistor
Secondary pressure resistance: ~80V
Output Current: ~50mA
Transportation delay H/L: 3μs
Transportation delay L/H: 3μs
Rise time: 2μs
Rise time: 3μs
First order voltage: 1.15 V
1st forward current: ~60mA
Conversion efficiency: 100 - 600% (GB rank)
Operating Temperature: -55 to +110 °C
Installation Type: Through Hole
Package: DIP4